1.
Assume that a solar cell with a cell area of 10 cm2 can
be modeled by a single diode model with following parameters: J0=10-10
A/cm2 n=1.15 JPH=25 mA/cm2 under AM1.5
illumination with 100 mW/cm2 power density. a.
Assuming that the series and shunt parasitic resistances are
negligible plot the dark and illuminated I-V characteristic of the solar cell
in the -0.75 to 0.75 V voltage regime and calculate VOC ISC
fill factor and the photo-conversion efficiency of the solar cell.b.
Assuming that Rshunt= 1 KO plot the dark and
illuminated I-V characteristics of the solar cell for Rs values of
0.02 O 0.05 O 0.1 O 0.2 O 0.4 O and 0.8 O. Find out the VOC ISC
fill factor and the photo-conversion efficiency of the solar cell for each
condition. Plot the fill factor and the photo-conversion efficiency of the
solar cell as a function of the Rshunt.c.
Assuming that RS= 0.1 O plot the dark and illuminated
I-V characteristics of the solar cell for Rshunt values of 10 O 30
O 100 O 300 O 1 kO and 3 kO. Find out the VOC ISC
fill factor and the photo-conversion efficiency of the solar cell for each
condition. Plot the fill factor and the photo-conversion efficiency of the
solar cell as a function of the Rshunt.